.lib: Library level attributes
Logic Library
Technology libraries :.lib
Libraries In Physical Design
Technology libraries are integral part of the ASIC backend EDA tools. Important two libraries are briefly explained below.
Technology File Libraries
Technology file defines basic characteristic of cell library pertaining to a particular technology node. They are units used in the design, graphical characteristics like colors, stipple patterns, line styles, physical parameters of metal layers, coupling capacitances, capacitance models, dielectric values, device characteristics, design rules. These specifications are divided into technology file sections.
Units for power, voltage, current etc are defined in technology section.
The color section defines primary and display colors that a tool uses to display designs in the library.
Stipple pattern are defined in stipple sections.
Different layer definitions like its current density, width etc are defined in layer section.
Fringe capacitances generated by crossing of interconnects are defined in fringe cap section.
Similarly several other specifications like metal density, design rules that apply to design in library, place and route (P&R) rules, slot rule, resistance model are defined in their respective sections.
Standard Cell Libraries, I/O Cell Libraries, Special Cell Libraries
A standard cell library is a collection of pre designed layout of basic logic gates like inverters, buffers, ANDs, ORs, NANDs etc.
All the cells in the library have same standard height and have varied width. These standard cell libraries are known as reference libraries in Astro.
These reference libraries are technology specific and are generally provided by ASIC vendor like TSMC, Artisan, IBM etc. Standard cell height for 130 TSMC process is 3.65 µM.
In addition to standard cell libraries, reference libraries contain I/O and Power/Ground pad cell libraries. It also contain IP libraries for reusable IP like RAMs, ROMs and other pre-designed, standard, complex blocks.
The TSMC universal I/O libraries include several power/ground cells that supply different voltages to the core, pre-drivers and post drivers. Internal pull-up or pull-down is provided to some cells in I/O libraries.
Reference
Related Articles
Multiple Threshold (Multi Vt) Cell Libraries
common ways to reduce leakage power is to use multiple Vt libraries.
Subthreshold leakage varies exponentially with the Vt comparated to
the weaker dependance of delay over Vt.
Libraries are offered in different versions each consisting of
standard Vt cells, low Vt cells and high Vt cells independant of each
other. Power and timing is optimized based on these libraries and they
offer good flexibility and opportunity to logic and physical synthesis
tool for optimization process.
Dual Vt synthesis flow has become quite common in 130nm and below
tehnology nodes. In this flow initial synthesis is carried out
targeting primary library which may be a low Vt or high Vt or normal
Vt library, and the second iteraton of synthesis and optimization is
performed based on secondary libraries which are also libraries
consistitng of multiple threshold cells.
Which library has to be used as primary library ?
This depends on the optimization target as per the design requirement.
In general, if optimization target is power performance, first
syntheize the design using the high Vt cell library which achieves
lowest leakage power. In the next iteration of optimization cells in
the critical path has to be replaced by low Vt cells which are faster.
If the optimization target is to meet timing then first use low Vt
cell library to achieve timing and then optimize leakage power using
high Vt cells.