Temperature variation
is unavoidable in the everyday operation of a design. Effects on performance
caused by temperature fluctuations are most often handled as linear scaling
effects, but some submicron silicon processes require nonlinear calculations.
Showing posts with label operating Condition. Show all posts
Showing posts with label operating Condition. Show all posts
Operating Condition: Supply Voltage Variation
8.2. Supply Voltage Variation
The design’s supply voltage can vary from the established ideal
value during day-to-day operation. Often a complex calculation (using a shift
in threshold voltages) is employed, but a simple linear scaling factor is also
used for logic-level performance calculations.
Operating Condition: Process Variation
8.1. Process Variation
This variation
accounts for deviations in the semiconductor fabrication process. Usually
process variation is treated as a percentage variation in the performance
calculation. Variations in the process parameters can be impurity concentration
densities, oxide thicknesses and diffusion depths. These are caused bye non
uniform conditions during depositions and/or during diffusions of the
impurities. This introduces variations in the sheet resistance and transistor
parameters such as threshold voltage. Variations are in the dimensions of the
devices, mainly resulting from the limited resolution of the photolithographic
process. This causes (W/L) variations in MOS transistors.
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